Apparatus and method for plasma treatment
US6514347B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 14, 2001 |
| Grant date | Feb 4, 2003 |
| Priority date | — |
| Expiry date | Feb 14, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32642
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A compensation ring 31 disposed to surround a periphery of a wafer W on a susceptor 30 is concentrically divided into an inside first compensation ring member 32 and an outside second compensation ring member 33. A width of a first compensation ring member 32 is made such thin as one to three times mean free path of treatment gas molecules, thereby suppressing heat transfer between a susceptor 30 and a second compensation ring member 33. A base of a second compensation ring member, through a layer of conductive silicone rubber 34, is made to come into an intimate contact with an upper surface of a susceptor 30, thus helping to cool.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.