Phase shift mask and method of manufacture
US6514642B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2001 |
| Grant date | Feb 4, 2003 |
| Priority date | — |
| Expiry date | Mar 3, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a phase shift mask comprising an exposure light-transmitting substrate and a second light-transmitting region thereon, the second light-transmitting region functions as a phase shifter and is made of a fluorine-doped molybdenum silicide film or fluorine-doped chromium silicide film formed by a sputtering technique that uses molybdenum metal, chromium metal, molybdenum silicide or chromium silicide as the target and SiF2 as the reactive gas. The phase shifter has a high refractive index to short-wavelength exposure light, enabling a 180-degree phase change to be achieved at a minimum film thickness, and also has a good stability to such light. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.