Patent · US Expired

Large area silicon carbide devices and manufacturing methods therefor

US6514779B1 · kind B1 · utility

21Cited by

14References

15Claims

0Family size

Assignee

Cree, Inc. · US

Inventors

Sei-Hyung Ryu · Cary, US
Anant Agarwal · San Jose, US
Craig Capell · Hillsborough, US
John Williams Palmour · Raleigh, US

Key dates

Filing date	Oct 17, 2001
Grant date	Feb 4, 2003
Priority date	—
Expiry date	Oct 17, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A silicon carbide device is fabricated by forming a plurality of a same type of silicon carbide devices on at least a portion of a silicon carbide wafer in a predefined pattern. The silicon carbide devices have corresponding first contacts on a first face of the silicon carbide wafer. The plurality of silicon carbide devices are electrically, tested to identify ones of the plurality of silicon carbide devices which pass an electrical test. The first contact of the identified ones of the silicon carbide devices are then selectively interconnected. Devices having a plurality of selectively connected silicon carbide devices of the same type are also provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.