Inventor · Cary, NC, US

Sei-Hyung Ryu

107Patents
16h-index
48Co-inventors
86Inventor score

Filing activity: Sep 22, 1999 → Jan 31, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US6979863B2 Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same Electricity 197 Expired
US6956238B2 SILICON CARBIDE POWER METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL AND METHODS OF FABRICATING SILICON CARBIDE METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL Electricity 65 Expired
US7026650B2 Multiple floating guard ring edge termination for silicon carbide devices Electricity 58 Expired
US6653659B2 Silicon carbide inversion channel mosfets Emerging Cross-Sectional Technologies 57 Expired
US7381992B2 Silicon carbide power devices with self-aligned source and well regions Emerging Cross-Sectional Technologies 54 Active
US6429041B1 Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation Emerging Cross-Sectional Technologies 54 Expired
US7221010B2 Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors Electricity 53 Expired
US7074643B2 Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same Emerging Cross-Sectional Technologies 49 Expired
US6329675A Self-aligned bipolar junction silicon carbide transistors Electricity 46 Expired
US6218254A Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices Electricity 45 Expired
US7118970B2 Methods of fabricating silicon carbide devices with hybrid well regions Emerging Cross-Sectional Technologies 45 Expired
US7728402B2 Semiconductor devices including schottky diodes with controlled breakdown Electricity 44 Active
US7547578B2 Methods of processing semiconductor wafers having silicon carbide power devices thereon Emerging Cross-Sectional Technologies 41 Active
US8232558B2 Junction barrier Schottky diodes with current surge capability Electricity 35 Active
US7923320B2 Methods of fabricating vertical JFET limited silicon carbide metal-oxide semiconductor field effect transistors Electricity 23 Active
US6514779B1 Large area silicon carbide devices and manufacturing methods therefor Electricity 21 Expired
US8680587B2 Schottky diode Electricity 16 Active
US8653534B2 Junction Barrier Schottky diodes with current surge capability Electricity 11 Active
US7345310B2 Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof Electricity 10 Expired
US8664665B2 Schottky diode employing recesses for elements of junction barrier array Electricity 10 Active
US7304334B2 Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same Electricity 9 Expired
US8492827B2 Vertical JFET limited silicon carbide metal-oxide semiconductor field effect transistors Electricity 9 Active
US9142662B2 Field effect transistor devices with low source resistance Electricity 9 Active
US9029945B2 Field effect transistor devices with low source resistance Electricity 8 Active
US9673283B2 Power module for supporting high current densities Electricity 8 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.