Method of forming a gate electrode in a semiconductor device
US6514826B1 · kind B1 · utility
3Cited by
14References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2000 |
| Grant date | Feb 4, 2003 |
| Priority date | — |
| Expiry date | Nov 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02304
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is disclosed a method of forming a gate electrode in a semiconductor device. The present invention forms a gate insulating film using (TiO2)x(Al2O3)x-1 in which a titanium oxide film (TiO2) having a high dielectric constant and an aluminum oxide film having leakage and interfacial property are mixed. Therefore, the present invention could not only improve the leakage current characteristic of a semiconductor device but also early develop a high-speed device having a high density in the future.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.