Inventor · Seojong-myeon, KR

Tae-Ho Cha

19Patents
5h-index
31Co-inventors
66Inventor score

Filing activity: Nov 27, 2000 → Apr 14, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US6537901B2 Method of manufacturing a transistor in a semiconductor device Electricity 89 Expired
US6506676B2 Method of manufacturing semiconductor devices with titanium aluminum nitride work function Electricity 56 Expired
US6586288B2 Method of forming dual-metal gates in semiconductor device Electricity 53 Expired
US8466052B2 Method of fabricating semiconductor device having buried wiring Electricity 39 Active
US6514827B2 Method for fabricating a dual metal gate for a semiconductor device Electricity 18 Expired
US7759263B2 Methods for fabricating improved gate dielectrics Emerging Cross-Sectional Technologies 3 Active
US6514826B1 Method of forming a gate electrode in a semiconductor device Electricity 3 Expired
US7528042B2 Method for fabricating semiconductor devices having dual gate oxide layer Electricity 2 Active
US7157339B2 Method for fabricating semiconductor devices having dual gate oxide layers Electricity 2 Expired
US7928498B2 Gate structures in semiconductor devices Electricity 1 Active
US8404576B2 Methods of forming a gate structure Electricity 1 Active
US11069820B2 FinFET devices having active patterns and gate spacers on field insulating layers Electricity 1 Active
US7781849B2 Semiconductor devices and methods of fabricating the same Electricity 0 Active
US7585787B2 Semiconductor memory device and method of manufacturing the same Electricity 0 Active
US7518214B2 Semiconductor device and method of fabricating the same Electricity 0 Active
US9412842B2 Method for fabricating semiconductor device Electricity 0 Active
US10658249B2 Methods for fabricating finFET devices having gate spacers on field insulating layers Electricity 0 Active
US7879737B2 Methods for fabricating improved gate dielectrics Emerging Cross-Sectional Technologies 0 Active
US7989892B2 Gate structure, and semiconductor device having a gate structure Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.