Method of inhibiting lateral diffusion between adjacent wells by introducing carbon or fluorine ions into bottom of STI groove
US6514833B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2000 |
| Grant date | Feb 4, 2003 |
| Priority date | — |
| Expiry date | Sep 22, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices comprising a plurality of active device regions formed in a common semiconductor substrate, e.g., CMOS devices, are formed by utilizing shallow trench isolation (STI) technology enhanced by selectively implanting the bottom surface of the trench with dopant diffusion inhibiting ions prior to filling the trench with a dielectric material and formation of opposite conductivity type well regions on either side of the trench. The inventive methodology effectively reduces or substantially eliminates deleterious counterdoping of the subsequently formed well regions resulting from thermally-induced lateral inter-diffusion of p-type and/or n-type dopant impurities used for forming the well regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.