Method for making a semiconductor device
US6514847B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2000 |
| Grant date | Feb 4, 2003 |
| Priority date | — |
| Expiry date | Dec 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device, a plurality of wiring films are formed on a front surface of a base comprising an insulating resin and having electrode-forming holes, the surfaces of the wiring films and the surface of the base being positioned on the same plane and at least parts of the wiring films overlapping with the electrode-forming holes; a conductive material is embedded into the electrode-forming holes to form external electrodes on the back surface, away from the wiring films, of the base; a semiconductor element is positioned on the front surface of the base with an insulating film therebetween, the back surface of the semiconductor element being bonded to said front surface of the base; wires bond the electrodes of the semiconductor element to the corresponding wiring films; and a resin seals the wiring films and the wires.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.