In situ wafer heat for reduced backside contamination
US6514870B2 · kind B2 · utility
8Cited by
16References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 26, 2001 |
| Grant date | Feb 4, 2003 |
| Priority date | — |
| Expiry date | Jan 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/022
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is provided for preparing a substrate for processing in a chamber that has a substrate receiving portion. The substrate is positioned within the chamber in a location not on the substrate receiving portion. A gaseous flow is provided to the chamber, from which a plasma is struck to heat the substrate. After the substrate has been heated, it is moved to the substrate receiving portion for processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.