Charged-particle beam exposure apparatus, exposure system, control method therefor, and device manufacturing method
US6515409B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2000 |
| Grant date | Feb 4, 2003 |
| Priority date | — |
| Expiry date | Jun 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31769
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An element exposure field (EF) having a size falling within a range where aberration by an electron optical system is suppressed to a predetermined amount or less is divided into a plurality of partial fields (PF), and a pattern is drawn on a substrate with an electron beam on the basis of exposure information in which charged-particle beam dosages for the plurality of partial fields are set. Each partial field (PF) is continuously scanned and exposed with a corresponding dosage contained in the exposure information. Scan/exposure for each partial field (PF) is sequentially executed for all the partial fields (PF) in the element exposure field (EF).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.