Semiconductor device and a method therefor

US6518106B2 · kind B2 · utility

Assignee

• Motorola, Inc. · US

Inventors

• Tat Ngai · Austin, US
• Bich-Yen Nguyen · Austin, US
• Vidya Kaushik · Austin, US
• Jamie Schaeffer · Austin, US

Key dates

• Filing date: May 26, 2001
• Grant date: Feb 11, 2003
• Expiry date: May 26, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0177

Abstract

A semiconductor device with dual gate electrodes and its method of formation is taught. A first metal/silicon gate stack and a first gate dielectric are formed over a first doped region. The metal/gate stack comprises a metal portion over the first gate dielectric and a first gate portion over the metal portion. A silicon gate and a second gate dielectric are formed over the second doped region. In one embodiment, the first and second gate portions are P+ doped silicon germanium and the metal portion is TaSiN. In another embodiment, the first and second gate portions are N+ doped polysilicon and the metal portion is TaSiN.