Tat Ngai
3Patents
2h-index
5Co-inventors
33Inventor score
Filing activity: May 26, 2001 → Oct 9, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6518106B2 | Semiconductor device and a method therefor | Electricity | 49 | Expired |
| US8039877B2 | (110)-oriented p-channel trench MOSFET having high-K gate dielectric | Electricity | 4 | Active |
| US8237195B2 | Power MOSFET having a strained channel in a semiconductor heterostructure on metal substrate | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.