Patent · US Expired

Boride electrodes and barriers for cell dielectrics

US6518121B2 · kind B2 · utility

7Cited by

16References

8Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Husam N. Al-Shareef · Boise, US
Scott DeBoer · Boise, US
Dan Gealy · Kuna, US
Randhir P. S. Thakur · Boise, US

Key dates

Filing date	Aug 30, 2001
Grant date	Feb 11, 2003
Priority date	—
Expiry date	Aug 30, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH10B12/485
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Titanium boride (TiBx), zirconium boride (ZrBx) and hafnium boride (HfBx) barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The barriers protect cell dielectrics from diffusion and other interaction with surrounding materials during subsequent thermal processing.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.