Methods to control the threshold voltage of a deep trench corner device
US6518145B1 · kind B1 · utility
7Cited by
19References
10Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Aug 6, 1998 |
| Grant date | Feb 11, 2003 |
| Priority date | — |
| Expiry date | Aug 6, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor trench device comprises forming a dielectric on a substrate, the dielectric having an underlying oxide layer adjacent the substrate, etching a trench in the dielectric and the substrate, forming a recess in the underlying oxide layer, filling the recess with a nitride plug, filling the trench a conductive material and oxidizing the dielectric and the conductive material, wherein the nitride plug controls a shape of a corner of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.