Inventor · Wappingers Falls, NY, US

Paul C. Parries

57Patents
11h-index
128Co-inventors
81Inventor score

Filing activity: Apr 30, 1987 → Oct 23, 2014

Most-cited inventions

PatentTitleAreaCited byStatus
US4873205A Method for providing silicide bridge contact between silicon regions separated by a thin dielectric Emerging Cross-Sectional Technologies 99 Expired
US5466636A Method of forming borderless contacts using a removable mandrel Emerging Cross-Sectional Technologies 50 Expired
US5401675A Method of depositing conductors in high aspect ratio apertures using a collimator Electricity 39 Expired
US4799990A Method of self-aligning a trench isolation structure to an implanted well region Electricity 27 Expired
US6294449A Self-aligned contact for closely spaced transistors Electricity 26 Expired
US7193262B2 Low-cost deep trench decoupling capacitor device and process of manufacture Electricity 20 Expired
US8395217B1 Isolation in CMOSFET devices utilizing buried air bags Electricity 19 Active
US7888723B2 Deep trench capacitor in a SOI substrate having a laterally protruding buried strap Electricity 16 Active
US5453400A Method and structure for interconnecting different polysilicon zones on semiconductor substrates for integrated circuits Electricity 15 Expired
US6967885B2 Concurrent refresh mode with distributed row address counters in an embedded DRAM Physics 15 Expired
US5793075A Deep trench cell capacitor with inverting counter electrode Electricity 14 Expired
US7923815B2 DRAM having deep trench capacitors with lightly doped buried plates Electricity 10 Active
US8236632B2 FET structures with trench implantation to improve back channel leakage and body resistance Electricity 9 Active
US5672901A Structure for interconnecting different polysilicon zones on semiconductor substrates for integrated circuits Electricity 9 Expired
US6410399B1 Process to lower strap, wordline and bitline contact resistance in trench-based DRAMS by silicidization Electricity 9 Expired
US5976982A Methods for protecting device components from chemical mechanical polish induced defects Electricity 8 Expired
US6194736A Quantum conductive recrystallization barrier layers Electricity 8 Expired
US6518145B1 Methods to control the threshold voltage of a deep trench corner device Electricity 7 Expired
US7078756B2 Collarless trench DRAM device Electricity 7 Expired
US7194670B2 Command multiplier for built-in-self-test Physics 6 Expired
US6265278A Deep trench cell capacitor with inverting counter electrode Electricity 6 Expired
US8273629B2 Through-gate implant for body dopant Electricity 6 Active
US7791124B2 SOI deep trench capacitor employing a non-conformal inner spacer Electricity 5 Active
US7705386B2 Providing isolation for wordline passing over deep trench capacitor Electricity 5 Active
US8809953B2 FET structures with trench implantation to improve back channel leakage and body resistance Electricity 5 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.