Method of forming a trench schottky rectifier

US6518152B2 · kind B2 · utility

Assignee

• General Semiconductor, Inc. · US

Inventors

• Fwu-Iuan Hshieh · Saratoga, US
• Max Chen · San Mateo, US
• Koon Chong So · Fremont, US
• Yan Man Tsui · Union City, US

Key dates

• Filing date: Jan 10, 2002
• Grant date: Feb 11, 2003
• Expiry date: Jan 10, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/60

Abstract

A Schottky rectifier is provided. The Schottky rectifier comprises: (a) a semiconductor region having first and second opposing faces, with the semiconductor region comprising a cathode region of first conductivity type adjacent the first face and a drift region of the first conductivity type adjacent the second face, and with the drift region having a lower net doping concentration than that of the cathode region; (b) one or more trenches extending from the second face into the semiconductor region and defining one or more mesas within the semiconductor region; (c) an insulating region adjacent the semiconductor region in lower portions of the trench; (d) and an anode electrode that is (i) adjacent to and forms a Schottky rectifying contact with the semiconductor at the second face, (ii) adjacent to and forms a Schottky rectifying contact with the semiconductor region within upper portions of the trench and (iii) adjacent to the insulating region within the lower portions of the trench.