Method of manufacturing connection components using a plasma patterned mask
US6518160B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 1999 |
| Grant date | Feb 11, 2003 |
| Priority date | — |
| Expiry date | Feb 5, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/0585
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A connection component is made by providing an assembly comprising a base layer of a dielectric material, a metal layer overlying the base layer, and a top layer of a plasma-etchable material overlying the metal layer; forming openings in the top layer to produce a top layer mask; and forming first conductive elements from the metal layer by removing metal from regions of the metal layer aligned with the openings in the top layer mask. This method may be used to form a connection component having vias or bond windows formed therein for connection with other elements of a microelectronic device and conductive elements may be formed on either or both sides of the base layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.