Liquid phase deposition of a silicon oxide layer for use as a liner on the surface of a dual damascene opening in a low dielectric constant layer
US6518166B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2001 |
| Grant date | Feb 11, 2003 |
| Priority date | — |
| Expiry date | Apr 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming a dual damascene opening, in a composite layer comprised with low k layers, to accommodate a dual damascene type, copper structure, has been developed. The process features the use of a silicon oxide layer, formed on the surfaces of the composite layer, exposed in the narrow diameter, via hole component of the dual damascene opening. The silicon oxide layer prevents via poisoning, or outgassing of amines or hydroxyls from the low k layers exposed in the via hole opening, that can evolve during a subsequent photolithographic development cycle, used to define the trench shape component of the dual damascene opening. The protective silicon oxide layer is conformally formed on the exposed-surfaces of the via hole component, via a liquid phase deposition procedure, performed at room temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.