Method of forming a metal or metal nitride interface layer between silicon nitride and copper
US6518167B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2002 |
| Grant date | Feb 11, 2003 |
| Priority date | — |
| Expiry date | Apr 16, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a metal or metal nitride layer interface between a copper layer and a silicon nitride layer can include providing a metal organic gas or metal/metal nitride precursor over a copper layer, forming a metal or metal nitride layer from reactions between the metal organic gas or metal/metal nitride precursor and the copper layer, and depositing a silicon nitride layer over the metal or metal nitride layer and copper layer. The metal or metal nitride layer can provide a better interface adhesion between the silicon nitride layer and the copper layer. The metal layer can improve the interface between the copper layer and the silicon nitride layer, improving electromigration reliability and, thus, integrated circuit device performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.