Semiconductor device with variable composition low-k inter-layer dielectric and method of making
US6518646B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2001 |
| Grant date | Feb 11, 2003 |
| Priority date | — |
| Expiry date | Mar 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Strong adhesion to doped low-k inter-layer dielectrics is provided by varying the composition of dopant near the surface layers of the inter-layer dielectric. The concentration of dopant is gradually increased from about zero atomic % at the interface between the inter-layer dielectric and semiconductor substrate to improve adhesion of the inter-layer dielectric to the semiconductor substrate. The concentration of dopant at the upper surface of the inter-layer dielectric is gradually decreased to about zero atomic % at the upper surface of the inter-layer dielectric film in order to improve adhesion of additional layers to the inter-layer dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.