Method and apparatus for measuring very thin dielectric film thickness and creating a stable measurement environment
US6519045B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 31, 2001 |
| Grant date | Feb 11, 2003 |
| Priority date | — |
| Expiry date | Jan 31, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thickness metrology apparatus and method for accurately determining the actual thickness of thin dielectric film on a semiconductor wafer. The wafer is subjected to a heat treatment such as baking at a heating station of the apparatus to cause desorption of organic compounds from the film. The treated wafer is transferred to a measurement stage where the thickness of the film is measured by an ellipsometer, for example. The actual thickness of the film is determined from the measured thickness and a change in the measured film thickness as a function of time for the film due to absorption of organic compounds onto the film following desorption of organic compounds therefrom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.