Using hot carrier injection to control over-programming in a non-volatile memory cell having an oxide-nitride-oxide (ONO) structure
US6519182B1 · kind B1 · utility
41Cited by
5References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2001 |
| Grant date | Feb 11, 2003 |
| Priority date | — |
| Expiry date | Jul 10, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3468
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A programming operation using hot carrier injection is performed on a non volatile memory cell having an oxide-nitride-oxide structure by applying a first train of voltage pulses to he drain and a second train of voltage pulses to the gate. The programming method of the present invention prevents over-programming, minimizes programming time, and increases memory cell endurance and reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.