single crystalline silicon wafer, ingot, and producing method thereof
US6521316B2 · kind B2 · utility
5Cited by
7References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2000 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Jan 17, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of a large defect area while increasing a micro-vacancy defect area in an agglomerated vacancy point area, which is the area between a central axis and an oxidation-induced stacking fault ring, by providing uniform conditions of crystal ingot growth and cooling and by adjusting a pulling rate for growing an ingot to grow, thus the oxidation-induced stacking fault ring exists only at an edge of the ingot radius.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.