Hyon-Jong Cho
17Patents
3h-index
15Co-inventors
49Inventor score
Filing activity: Dec 22, 2000 → Oct 31, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6527859B2 | Apparatus for growing a single crystalline ingot | Emerging Cross-Sectional Technologies | 11 | Expired |
| US7559988B2 | Method and apparatus for growing high quality silicon single crystal, silicon single crystal ingot grown thereby and wafer produced from the same single crystal ingot | Emerging Cross-Sectional Technologies | 5 | Active |
| US6521316B2 | single crystalline silicon wafer, ingot, and producing method thereof | Emerging Cross-Sectional Technologies | 5 | Expired |
| US7416603B2 | High quality single crystal and method of growing the same | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7326292B2 | Quality evaluation method for single crystal ingot | Emerging Cross-Sectional Technologies | 3 | Active |
| US6574264B2 | Apparatus for growing a silicon ingot | Chemistry; Metallurgy | 2 | Expired |
| US6858077B2 | Single crystalline silicon wafer, ingot, and producing method thereof | Emerging Cross-Sectional Technologies | 2 | Expired |
| US7371283B2 | Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7799130B2 | Silicon single crystal ingot and wafer, growing apparatus and method thereof | Emerging Cross-Sectional Technologies | 1 | Active |
| US7378071B2 | Silicon wafer and method for producing silicon single crystal | Chemistry; Metallurgy | 1 | Expired |
| US8216372B2 | Apparatus for growing high quality silicon single crystal ingot and growing method using the same | Emerging Cross-Sectional Technologies | 1 | Active |
| US8114216B2 | Semiconductor single crystal growth method having improvement in oxygen concentration characteristics | Chemistry; Metallurgy | 1 | Active |
| US7608145B2 | Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby | Emerging Cross-Sectional Technologies | 1 | Active |
| US7229495B2 | Silicon wafer and method for producing silicon single crystal | Chemistry; Metallurgy | 0 | Expired |
| US8574362B2 | Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot | Emerging Cross-Sectional Technologies | 0 | Active |
| US8753445B2 | Apparatus for growing high quality silicon single crystal ingot and growing method using the same | Emerging Cross-Sectional Technologies | 0 | Active |
| US7427325B2 | Method for producing high quality silicon single crystal ingot and silicon single crystal wafer made thereby | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.