Method for forming dual damascene structure
US6521542B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 14, 2000 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Jun 14, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76808
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for forming a step in a layer of material. The method includes forming the layer over a substrate. A cavity is formed in a portion of an upper surface of the layer. The formed cavity is filled with a filler material to provide a substantially planar surface over the substrate. A photoresist layer is formed over the substantially planar surface over the substrate. An aperture is formed in the photoresist layer in registration with the formed cavity. The aperture exposes a portion of the filler material. The exposed portion of the filler material is removed along with a contiguous portion of the layer to form the step in the indentation. The cavity may be either a trench or a via. A “Trench First” approach and a “Via First” approach are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.