Gabriela Brase
6Patents
3h-index
11Co-inventors
50Inventor score
Filing activity: Feb 9, 2000 → Sep 20, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6576550B1 | ‘Via first’ dual damascene process for copper metallization | Electricity | 19 | Expired |
| US6521542B1 | Method for forming dual damascene structure | Electricity | 15 | Expired |
| US6812130B1 | Self-aligned dual damascene etch using a polymer | Electricity | 4 | Expired |
| US7655563B2 | Method for preventing the formation of dentrites in a semiconductor | Electricity | 1 | Active |
| US9054150B2 | Chip edge sealing | Electricity | 0 | Active |
| US6841481B2 | Etching process for a two-layer metallization | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.