Electrically programmable memory cell
US6521942B2 · kind B2 · utility
1Cited by
10References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2001 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Aug 10, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6893
Abstract
The present invention relates to a method of manufacturing an electrically programmable memory cell with a lateral floating gate with respect to the control gate, including the steps of forming an insulated control gate on an active area; forming a thin insulating layer around the control gate; successively depositing a thin layer of a conductive material and a layer of an insulating material; anisotropically etching the insulating material to form spacers of this material; and removing the portions of the thin conductive layer which are not coated with the spacers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.