Solid-state magnetic memory using ferromagnetic tunnel junctions
US6522573B2 · kind B2 · utility
53Cited by
3References
21Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 29, 2001 |
| Grant date | Feb 18, 2003 |
| Priority date | — |
| Expiry date | Jun 29, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
According to the present invention, there is provided a solid-state magnetic memory including a semiconductor substrate, a ferromagnetic tunnel junction element facing the semiconductor substrate, first and second wirings sandwiching the ferromagnetic tunnel junction elements from both sides thereof, a third wiring facing the ferromagnetic tunnel junction element, and a diode at least part of which is formed in a surface region of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.