Ring-shaped high-density plasma source and method
US6523493B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 1, 2000 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Aug 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3408
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A processing system for processing a substrate with a plasma is provided with an antenna for producing a ring-shaped inductively coupled plasma in a vacuum processing chamber particularly useful for coating or etching semiconductor wafer substrates. A three-dimensional antenna in the form of a coil provides spacial distribution of plasma parameters in a ring-shaped region inside of the chamber that can be adapted to specific physical and process requirements. An axially symmetric permanent magnet assembly enhances the ring-shaped concentration of a high-density inductively coupled plasma by trapping the plasma in the ring-shaped region near the inside of a dielectric window located in the chamber wall in close proximity to segments of the antenna that lie adjacent the outside of the window.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.