Apparatus for depositing low dielectric constant oxide film
US6523494B1 · kind B1 · utility
3Cited by
26References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2000 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Jan 15, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composite silicon dioxide layer with a reduced dielectric constant is formed by enhancing the surface sensitivity of a PECVD liner layer with activated oxygen. Pores form in an SACVD layer of silicon dioxide deposited from a TEOS precursor over the sensitized PECVD layer. The pores reduce the dielectric constant of the composite layer. Activated oxygen is provided to the PECVD layer in the form of ozone or an oxygen-based plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.