Method for forming platinum-rhodium stack as an oxygen barrier
US6524867B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2000 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Jan 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to an electrically conductive film stack for semiconductors and methods and apparatus for providing same. A film stack comprising a first layer of a platinum-rhodium alloy deposited by metal organic chemical vapor deposition (MOCVD) in the presence of a reducer, such as hydrogen (H2) gas, and a second layer of the platinum-rhodium alloy deposited in the presence of an oxidizing gas, such as ozone (O3), provides an electrical conductor that is also a relatively good barrier to oxygen. The platinum-rhodium film stack can be used as an electrode or capacitor plate for a capacitor with a high-k dielectric material. The electrode formed with alternating reducing and oxidizing agents produces a rough surface texture, which enhances the memory cell capacitance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.