Method and apparatus for detecting ion implant induced defects
US6524869B1 · kind B1 · utility
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12References
37Claims
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Key dates
| Filing date | Feb 9, 2001 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Feb 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various methods and apparatus are provided for testing an ion implantation tool. In one aspect, a method of testing an ion implanter is provided that includes forming a mask with a preselected pattern on a substrate. An ion implant is performed on the mask with the ion implanter. Following the ion implant, a scan of the mask is performed to identify any defects thereon. Defects appearing on the mask following the implant are indicative of latent mechanisms at work within the implanter. Ion implanter induced defects may be economically analyzed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.