Process for removal of photoresist after post ion implantation
US6524936B2 · kind B2 · utility
15Cited by
12References
43Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2000 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Dec 22, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/427
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process for stripping a photoresist layer after exposure to an ion implantation process. The process includes subjecting a substrate having the ion implanted photoresist layer thereon to a UV radiation exposure and subsequently removing the ion implanted photoresist by conventional stripping processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.