Method of forming a titanium silicide layer on a substrate
US6524952B1 · kind B1 · utility
89Cited by
15References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2000 |
| Grant date | Feb 25, 2003 |
| Priority date | — |
| Expiry date | Jul 11, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a silicide layer in contact with a silicon substrate. The method comprises forming the silicide layer by supplying a silicon-containing source that is different from the silicon substrate, such that the silicon in the silicide layer originates primarily from the silicon-containing source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.