Configurable plasma volume etch chamber
US6527911B1 · kind B1 · utility
123Cited by
5References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2001 |
| Grant date | Mar 4, 2003 |
| Priority date | — |
| Expiry date | Jun 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32568
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing chamber is provided. The plasma processing chamber includes a bottom electrode configured to support a substrate and a top electrode located over the bottom electrode. The plasma processing chamber further includes a plasma confinement assembly designed to transition between a closed orientation and an open orientation. In the closed orientation, the plasma confinement assembly defines a first volume for plasma during processing, and in the open orientation, the plasma confinement assembly defines a second volume for plasma during processing which is larger than the first volume.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.