Method of manufacturing pressure microsensors
US6527961B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 1998 |
| Grant date | Mar 4, 2003 |
| Priority date | — |
| Expiry date | Mar 2, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0055
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for the formation of a region of silicon dioxide on a substrate of monocrystalline silicon. The epitaxial growth of a silicon layer, the opening of holes in the silicon layer above the silicon dioxide region, and the removal of the silicon dioxide which constitutes the region by means of chemical attack through the holes until a silicon diaphragm, attached to the substrate along the edges and separated therefrom by a space, is produced. In order to form an absolute pressure microsensor, the space has to be sealed. To do this, the method provides for the holes to have diameters smaller than the thickness of the diaphragm and to be closed by the formation of a silicon dioxide layer by vapor-phase deposition at atmospheric pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.