Interconnect structure formed in porous dielectric material with minimized degradation and electromigration
US6528409B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2002 |
| Grant date | Mar 4, 2003 |
| Priority date | — |
| Expiry date | Apr 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1089
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
For fabricating an interconnect structure within an interconnect opening formed within a porous dielectric material, the interconnect opening is initially formed within a low-K precursor material that is not completely cured. The interconnect opening is then filled with a conductive fill material being contained within the interconnect opening and with a top surface of the conductive fill material within the interconnect opening being exposed. A capping material is formed on the top surface of the conductive fill material, and the capping material is an amorphous alloy or is a microcrystalline alloy having stuffed grain boundaries. A thermal curing process is then performed for curing the low-K precursor material to become a porous low-K dielectric material. The capping material on the top surface of the conductive fill material is impervious to at least one of oxygen, carbon, hydrogen, chlorine, and porogen fragments that are generated as out-gassing volatile by-products from the low-K precursor material during the thermal curing process to preserve the integrity of the interconnect structure. In another aspect for fabricating an interconnect structure, an interconnect opening is …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.