Chemical mechanical polishing slurry
US6530968B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 20, 2001 |
| Grant date | Mar 11, 2003 |
| Priority date | — |
| Expiry date | Nov 20, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09G1/02
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
This invention provides a chemical mechanical polishing slurry for polishing a metal film formed on an insulating film with a concave on a substrate wherein the slurry contains a thickener without an ionic group with an opposite sign to a charge on a polishing material surface to 0.001 wt % or more and less than 0.05 wt % to the total amount of the slurry and has a slurry viscosity of 1 mPa·s to 5 mPa·s both inclusive. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing or erosion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.