Susceptor designs for silicon carbide thin films
US6530990B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2001 |
| Grant date | Mar 11, 2003 |
| Priority date | — |
| Expiry date | Feb 21, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A susceptor is disclosed for minimizing or eliminating thermal gradients that affect a substrate wafer during epitaxial growth. The susceptor comprises a first susceptor portion including a surface for receiving a semiconductor substrate wafer thereon, and a second susceptor portion facing the substrate-receiving surface and spaced from the substrate-receiving surface. The spacing is sufficiently large to permit the flow of gases therebetween for epitaxial growth on a substrate on the surface, while small enough for the second susceptor portion to heat the exposed face of a substrate to substantially the same temperature as the first susceptor portion heats the face of a substrate that is in direct contact with the substrate-receiving surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.