Inventor · Apex, NC, US

Joseph Sumakeris

24Patents
13h-index
19Co-inventors
74Inventor score

Filing activity: Mar 24, 1997 → Nov 20, 2009

Most-cited inventions

PatentTitleAreaCited byStatus
US8052794B2 Directed reagents to improve material uniformity Chemistry; Metallurgy 347 Active
US6217662A Susceptor designs for silicon carbide thin films Chemistry; Metallurgy 330 Expired
US7226805B2 Sequential lithographic methods to reduce stacking fault nucleation sites Emerging Cross-Sectional Technologies 226 Active
US6653659B2 Silicon carbide inversion channel mosfets Emerging Cross-Sectional Technologies 57 Expired
US6429041B1 Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation Emerging Cross-Sectional Technologies 54 Expired
US6530990B2 Susceptor designs for silicon carbide thin films Chemistry; Metallurgy 49 Expired
US7279115B1 Method to reduce stacking fault nucleation sites and reduce Vf drift in bipolar devices Emerging Cross-Sectional Technologies 38 Expired
US7230274B2 Reduction of carrot defects in silicon carbide epitaxy Electricity 22 Expired
US7118781B1 Methods for controlling formation of deposits in a deposition system and deposition methods including the same Chemistry; Metallurgy 18 Expired
US7109521B2 Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls Emerging Cross-Sectional Technologies 17 Expired
US6797069B2 Gas driven planetary rotation apparatus and methods for forming silicon carbide layers Electricity 16 Expired
US6974720B2 Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby Electricity 15 Expired
US6569250B2 Gas-driven rotation apparatus and method for forming silicon carbide layers Chemistry; Metallurgy 14 Expired
US6849874B2 Minimizing degradation of SiC bipolar semiconductor devices Electricity 13 Expired
US7018554B2 Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices Emerging Cross-Sectional Technologies 12 Expired
US8430960B2 Deposition systems and susceptor assemblies for depositing a film on a substrate Chemistry; Metallurgy 10 Active
US6896738B2 Induction heating devices and methods for controllably heating an article Chemistry; Metallurgy 7 Expired
US7427326B2 Minimizing degradation of SiC bipolar semiconductor devices Electricity 4 Active
US8536582B2 Stable power devices on low-angle off-cut silicon carbide crystals Electricity 3 Active
US7390367B1 Housing assembly for an induction heating device including liner or susceptor coating Chemistry; Metallurgy 2 Expired
US9903046B2 Reduction of carrot defects in silicon carbide epitaxy Electricity 1 Active
US9455356B2 High power silicon carbide (SiC) PiN diodes having low forward voltage drops Electricity 0 Expired
US7880171B2 Minimizing degradation of SiC bipolar semiconductor devices Electricity 0 Expired
US9155131B2 Methods for controllably induction heating an article Chemistry; Metallurgy 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.