Inductively coupled plasma etching apparatus
US6531030B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 30, 2000 |
| Grant date | Mar 11, 2003 |
| Priority date | — |
| Expiry date | Jun 30, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An inductively coupled plasma etching apparatus includes a chamber for generating a plasma therein. The chamber is defined by walls of a housing. A coil for receiving high frequency (RF) power is disposed adjacent to and outside of one of the walls of the housing. A metal plate is disposed adjacent to and outside of the wall of the housing that the coil is disposed adjacent to. The metal plate is positioned in a spaced apart relationship between the coil and the wall of the housing and has radial slits formed therein that extend transversely to the coil. A connector electrically connects the metal plate to the coil. A method for controlling an inner surface of a wall defining a chamber in which a plasma is generated is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.