Reactive Ion Etching chamber design for flip chip interconnections
US6531069B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2000 |
| Grant date | Mar 11, 2003 |
| Priority date | — |
| Expiry date | Jan 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32623
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
RIE processing chambers includes arrangements of gas outlets which force gas-flow-shadow elimination. Means are provided to control and adjust the direction of gases to the outlet to modify and control the direction of plasma flow at the wafer surface during processing. Means are provided to either move the exhaust paths for exhaust gases or to open and close exhaust paths sequentially, in a controlled manner, to modify flow directions of ions in the etching plasma. A combination of rotation/oscillation of a magnetic field imposed on the RIE chamber can be employed by rotation of permanent magnetic dipoles about the periphery of the RIE chamber or by controlling current through a coil wrapped around the periphery of the RIE process chamber to enhance the removal of the residues attributable to gas-flow-shadows formed by linear ion paths in the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.