Method to fabricate dish-free copper interconnects

US6531386B1 · kind B1 · utility

Assignee

• Chartered Semiconductor Manufacturing LTD · SG

Inventors

• Victor Lim · Pacifica, US
• Simon Chooi · Singapore, SG
• Randall Cher Liang Cha · Singapore, SG

Key dates

• Filing date: Feb 8, 2002
• Grant date: Mar 11, 2003
• Expiry date: Feb 8, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76852
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of fabricating at least one metal interconnect including the following steps. A structure having at least one exposed conductive structure is provided. A non-stick material layer is formed over the structure and the at least one exposed conductive structure. The non-stick material layer having an upper surface. The non-stick material layer is patterned to form a patterned non-stick material layer having at least one trench therethrough exposing at least a portion of the at least one conductive structure. A metal interconnect is formed in contact with the exposed portion of the at least one conductive structure within the at least one trench wherein the non-stick properties of the patterned non-stick material layer prevent accumulation of the metal comprising the metal interconnect upon the patterned upper surface of the patterned non-stick material layer. The at least one metal interconnect having an upper surface. The patterned non-stick material layer is removed. A planarized dielectric layer is formed over the structure exposing the upper surface of the at least one metal interconnect.