Method of depositing organosillicate layers
US6531398B1 · kind B1 · utility
24Cited by
68References
83Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2000 |
| Grant date | Mar 11, 2003 |
| Priority date | — |
| Expiry date | Oct 30, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an organosilicate layer is disclosed. The organosilicate layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxygen-containing gas. The organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the organosilicate layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the organosilicate layer is incorporated into a damascene structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.