Semiconductor power component with a reduced parasitic bipolar transistor

US6531748B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventor

• Frank Pfirsch · Birkenfeld, DE

Key dates

• Filing date: May 11, 2001
• Grant date: Mar 11, 2003
• Expiry date: May 11, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/824

Abstract

A semiconductor power component has a MOS structure in which the source region is formed of a material whose band gap is smaller than the band gap of the material of the channel region. This measure reduces the gain of a parasitic bipolar transistor.