MOS transistor with reduced floating body effect
US6534373B1 · kind B1 · utility
134Cited by
8References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 26, 2001 |
| Grant date | Mar 18, 2003 |
| Priority date | — |
| Expiry date | Mar 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6717
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating an integrated circuit utilizes asymmetric source/drain junctions. The process can be utilized for P-channel or N-channel metal oxide field semiconductor effect transistors (MOSFETS). The drain extension is deeper than the source extension. The source extension is more conductive than the drain extension. The transistor has reduced short channel effects and strong drive current and yet is reliable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.