Thermal process apparatus for measuring accurate temperature by a radiation thermometer
US6534749B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 2, 2001 |
| Grant date | Mar 18, 2003 |
| Priority date | — |
| Expiry date | Oct 2, 2021 |
Classification
- Technology area (CPC F)Mechanical Engineering; Lighting; Heating
- CPC primaryF27D21/0014
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A heat treatment apparatus applies an accurate heat treatment to a wafer by performing an accurate measurement of a temperature of a wafer by a radiation thermometer. Halogen lamps heat the wafer by irradiating a light on a front surface of the wafer. A guard ring supports the wafer so that the front surface of the wafer faces the halogen lamps. A gap is formed between the guard ring and a back surface of the wafer. The radiation thermometer detects a light radiated from the backside of the wafer by a quartz rod facing the backside of the substrate. The wafer placed on the guard ring defines a first space on the front surface side of the wafer and a second space on the back surface side of the wafer. The gap is configured and arranged so that an incident rate of a stray light entering the second space from the first space through the gap and incident on the quartz rod is equal to or less than a predetermined value, where the incident rate is defined by a ratio of an amount of the stray light incident on the quartz rod to an amount of light radiated by the halogen lamps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.