Semiconductor device, semiconductor element and method for producing same
US6534867B1 · kind B1 · utility
19Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2000 |
| Grant date | Mar 18, 2003 |
| Priority date | — |
| Expiry date | Sep 26, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises: a semiconductor substrate; a plurality of first diffusion layers having a low impurity density, the first diffusion layers being formed on the surface of the semiconductor substrate; a plurality of second diffusion layers having a high impurity density, the second diffusion layers being formed on the surface of the semiconductor substrate; a plurality of first contacts, each of which contacts the first diffusion layers and each of which is formed of a semiconductor; and a plurality of second contacts, each of which contacts the second diffusion layers and each of which is formed of a metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.