Deposition of smooth aluminum films
US6537427B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 4, 1999 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | Feb 4, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J3/022
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
This invention provides a conductive aluminum film and method of forming the same, wherein a non-conductive impurity is incorporated into the aluminum film. In one embodiment, the introduction of nitrogen creates an aluminum nitride subphase which pins down hillocks in the aluminum film to maintain a substantially smooth surface. The film remains substantially hillock-free even after subsequent thermal processing. The aluminum nitride subphase causes only a nominal increase in resistivity (resistivities remain below about 12 &mgr;&OHgr;-cm), thereby making the film suitable as an electrically conductive layer for integrated circuit or display devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.