Forming metal silicide resistant to subsequent thermal processing
US6537910B1 · kind B1 · utility
148Cited by
15References
53Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2000 |
| Grant date | Mar 25, 2003 |
| Priority date | — |
| Expiry date | Apr 10, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12674
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A metal suicide film and method of forming the same are provided. The method comprises depositing metal silicide layers onto a substrate assembly with alternating layers of silicon. The resulting metal silicide film has a disrupted grain structure and smaller grain sizes than prior art films of the same thickness, which increases the resistance of the material to stress cracks in subsequent thermal processing and reduces the overall residual stress of the material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.